SI3588DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

2

FET Type :

N and P-Channel

Current - Continuous Drain (Id) @ 25°C :

2.5A 570mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

830mW 83mW

Turn-Off Delay Time :

24 ns

Transistor Element Material :

SILICON

Element Configuration :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

29 ns

Drain to Source Breakdown Voltage :

20V

Terminal Form :

Gull wing

Power Dissipation :

830mW

Rise Time :

29ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Pin Count :

6

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3A

Max Power Dissipation :

830mW

Resistance :

145mOhm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

450mV

Gate to Source Voltage (Vgs) :

8V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Finish :

Pure Matte Tin (Sn)

Number of Pins :

6

Series :

TrenchFET®

Base Part Number :

SI3588

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 4.5V

Radiation Hardening :

No

Pbfree Code :

yes

Number of Terminations :

6

FET Feature :

Logic Level Gate

Nominal Vgs :

450 mV