SI3585DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Element Configuration :

Dual

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

Published :

2013

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SI3585

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

1.8A

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Finish :

PURE MATTE TIN

Nominal Vgs :

600 mV

Max Power Dissipation :

830mW

Series :

TrenchFET®

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Threshold Voltage :

600mV

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

2A

Drain-source On Resistance-Max :

0.125Ohm

Pin Count :

6

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Radiation Hardening :

No

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

12V