SI3585CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Contact Plating :

Tin

Terminal Form :

Gull wing

Series :

TrenchFET®

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e3

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

7 ns

Number of Channels :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

58m Ω @ 2.5A, 4.5V

Number of Elements :

2

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2.1A

Current - Continuous Drain (Id) @ 25°C :

3.9A 2.1A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Published :

2013

JEDEC-95 Code :

MO-193AA

Resistance :

195mOhm

Number of Terminations :

6

Power Dissipation :

1.1W

Gate to Source Voltage (Vgs) :

12V

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.9A

Turn-Off Delay Time :

13 ns

Max Power Dissipation :

1.3W

Max Junction Temperature (Tj) :

150°C

Weight :

19.986414mg

Rise Time :

10ns

Threshold Voltage :

1.5V

Power - Max :

1.4W 1.3W

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Turn On Delay Time :

3 ns

Time@Peak Reflow Temperature-Max (s) :

30