SI3586DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Pin Count :

6

Number of Terminations :

6

Mount :

Surface Mount

FET Type :

N and P-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Number of Elements :

2

Pbfree Code :

yes

Mounting Type :

Surface Mount

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.1V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Max Power Dissipation :

830mW

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Finish :

Pure Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI3586

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.4A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.5A

ECCN Code :

EAR99

Nominal Vgs :

1.1 V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

830mW

Published :

2016