SI3529DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Elements :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power - Max :

1.4W

Continuous Drain Current (ID) :

2.5A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Feature :

Logic Level Gate

Nominal Vgs :

3 V

FET Type :

N and P-Channel

Threshold Voltage :

3V

Number of Pins :

6

Radiation Hardening :

No

Input Capacitance :

205pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Drain to Source Resistance :

215mOhm

Input Capacitance (Ciss) (Max) @ Vds :

205pF @ 20V

Published :

2017

Element Configuration :

Dual

Max Operating Temperature :

150°C

Power Dissipation :

1.15W

Supplier Device Package :

6-TSOP

Drain to Source Voltage (Vdss) :

40V

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

2.5A 1.95A

Min Operating Temperature :

-55°C

Rds On Max :

125 mΩ

Max Power Dissipation :

1.15W

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.2A, 10V