RS1E350GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 35A, 10V

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

5

Drain-source On Resistance-Max :

0.002Ohm

Pulsed Drain Current-Max (IDM) :

140A

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

35A Ta 80A Tc

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3W Ta

Input Capacitance (Ciss) (Max) @ Vds :

4060pF @ 15V

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

35A

Case Connection :

DRAIN

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual