RS1E240GNTB
- Mfr.Part #
- RS1E240GNTB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 24A 8HSOP
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F5
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 24A
- Rise Time :
- 7.8ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 24A, 10V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Terminal Form :
- Flat
- Fall Time (Typ) :
- 11.5 ns
- Number of Elements :
- 1
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Turn-Off Delay Time :
- 47 ns
- Published :
- 2015
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 3W Ta 27.4W Tc
- Weight :
- 70.590313mg
- Number of Channels :
- 1
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- 8-PowerTDFN
- Turn On Delay Time :
- 16.3 ns
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 30V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 96A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Ta
- Datasheets
- RS1E240GNTB

N-Channel Tape & Reel (TR) 3.3m Ω @ 24A, 10V ±20V 1500pF @ 15V 23nC @ 10V 30V 8-PowerTDFN
RS1E240GNTB Overview
A device's maximal input capacitance is 1500pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 24A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 47 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
RS1E240GNTB Features
a continuous drain current (ID) of 24A
the turn-off delay time is 47 ns
based on its rated peak drain current 96A.
a 30V drain to source voltage (Vdss)
RS1E240GNTB Applications
There are a lot of ROHM Semiconductor
RS1E240GNTB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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