RS1E200BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

8

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Terminal Form :

Flat

Number of Terminations :

5

Packaging :

Cut Tape (CT)

Resistance :

2.8MOhm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Published :

2014

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Power Dissipation-Max :

3W Ta 25W Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

20 Weeks

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

20A

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5