RS1E301GNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Drain Current-Max (Abs) (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Terminal Form :

Flat

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 15V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

39.8nC @ 10V

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation-Max :

3W Ta

Vgs (Max) :

±20V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

30A Ta 80A Tc

Operating Temperature :

150°C TJ

Package / Case :

8-PowerTDFN

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0033Ohm

Avalanche Energy Rating (Eas) :

68 mJ

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED