RS1E170GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

6.7 mΩ

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55°C

Case Connection :

DRAIN

Mount :

Surface Mount

Max Power Dissipation :

3W

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

3.7 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Element Configuration :

Single

Lead Free :

Lead Free

Factory Lead Time :

20 Weeks

Rise Time :

4.8ns

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

Number of Channels :

1

Drain to Source Resistance :

6.7mOhm

Terminal Position :

Dual

Number of Pins :

8

Continuous Drain Current (ID) :

17A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Published :

2016

Turn-Off Delay Time :

27 ns

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Weight :

70.590313mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

720pF

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING