RS1E130GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

13A

Surface Mount :

yes

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 15V

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Pulsed Drain Current-Max (IDM) :

52A

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

3W Ta 22.2W Tc

Drain-source On Resistance-Max :

0.0152Ohm

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 13A, 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)