RS1E220ATTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

22A

Pulsed Drain Current-Max (IDM) :

88A

Vgs(th) (Max) @ Id :

2.5V @ 2mA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

22A Ta 76A Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Surface Mount :

yes

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

5850pF @ 15V

FET Type :

P-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

74 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0058ohm

Power Dissipation-Max :

3W Ta

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 22A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5