RS1E200GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Fall Time (Typ) :

8.4 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Power Dissipation-Max :

3W Ta 25.1W Tc

Turn On Delay Time :

13.2 ns

Mounting Type :

Surface Mount

Published :

2013

Element Configuration :

Single

Number of Pins :

8

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

20A

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

34.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

70.590313mg

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rise Time :

7.2ns

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Factory Lead Time :

20 Weeks

Number of Channels :

1

Packaging :

Tape and Reel (TR)