RS1E280GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 15V

Continuous Drain Current (ID) :

28A

Turn-Off Delay Time :

61.3 ns

Weight :

70.590313mg

Rise Time :

12.3ns

Number of Channels :

1

Mounting Type :

Surface Mount

Turn On Delay Time :

19.9 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Power Dissipation-Max :

3W Ta 31W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2013

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0033Ohm

Package / Case :

8-PowerTDFN

Factory Lead Time :

20 Weeks

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

18 ns

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 28A, 10V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F5

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount