RS1E280BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 15V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 28A, 10V

Mount :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Continuous Drain Current (ID) :

28A

Drain-source On Resistance-Max :

0.0032Ohm

Factory Lead Time :

20 Weeks

Number of Elements :

1

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2014

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Number of Pins :

8

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

112A

ECCN Code :

EAR99

Power Dissipation-Max :

3W Ta 30W Tc

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)