RS1E240BNTB

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Mfr.Part #
RS1E240BNTB
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 24A 8HSOP
Stock
10,639
In Stock :
10,639

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Terminal Position :
Dual
Terminal Form :
Flat
Drain-source On Resistance-Max :
0.0046Ohm
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
96A
Number of Pins :
8
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 15V
JESD-30 Code :
R-PDSO-F5
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 24A, 10V
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Number of Terminations :
5
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Drain to Source Voltage (Vdss) :
30V
DS Breakdown Voltage-Min :
30V
Power Dissipation-Max :
3W Ta 30W Tc
Vgs (Max) :
±20V
Mount :
Surface Mount
Continuous Drain Current (ID) :
24A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Cut Tape (CT)
Case Connection :
DRAIN
Package / Case :
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Factory Lead Time :
20 Weeks
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
24A Ta
Published :
2014
Datasheets
RS1E240BNTB
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1E240BNTB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, Package / Case:8-PowerTDFN, RS1E240BNTB pinout, RS1E240BNTB datasheet PDF, RS1E240BNTB amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1E240BNTB ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RS1E240BNTB


N-Channel Cut Tape (CT) 3.2m Ω @ 24A, 10V ±20V 3900pF @ 15V 70nC @ 10V 30V 8-PowerTDFN

RS1E240BNTB Overview


A device's maximum input capacitance is 3900pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

RS1E240BNTB Features


a continuous drain current (ID) of 24A
based on its rated peak drain current 96A.
a 30V drain to source voltage (Vdss)


RS1E240BNTB Applications


There are a lot of ROHM Semiconductor
RS1E240BNTB applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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