RS1E320GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0024Ohm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 32A, 10V

Rise Time :

15.6ns

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

32A

RoHS Status :

ROHS3 Compliant

Weight :

70.590313mg

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Published :

2015

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Number of Pins :

8

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 15V

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

42.8nC @ 10V

Mounting Type :

Surface Mount

Number of Channels :

1

Turn-Off Delay Time :

74.6 ns

Number of Elements :

1

Factory Lead Time :

10 Weeks

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

32A Ta

Fall Time (Typ) :

28.5 ns

Operating Temperature :

150°C TJ

Power Dissipation-Max :

3W Ta 34.6W Tc

Terminal Position :

Dual

Vgs (Max) :

±20V

Mount :

Surface Mount

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Turn On Delay Time :

21.8 ns