RQ3E180BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

23.3 mJ

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 4.5V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 15V

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Pulsed Drain Current-Max (IDM) :

72A

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Pbfree Code :

yes

Power Dissipation-Max :

2W Ta 20W Tc

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 18A, 10V

Case Connection :

DRAIN

Published :

2015

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain Current-Max (Abs) (ID) :

18A

Surface Mount :

yes

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0052Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerVDFN