RQ3E100GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerVDFN

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Turn On Delay Time :

8.4 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

40A

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Power Dissipation-Max :

2W Ta 15W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.1 ns

Rise Time :

4.3ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Continuous Drain Current (ID) :

10A

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 10A, 10V

Transistor Application :

SWITCHING

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 15V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Number of Elements :

1

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-F5

Published :

2013

FET Type :

N-Channel

Number of Channels :

1

Turn-Off Delay Time :

22.4 ns