RQ3E110AJTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 11A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 4.5V

Drain-source On Resistance-Max :

0.0117Ohm

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerVDFN

Vgs (Max) :

±12V

Packaging :

Cut Tape (CT)

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Terminal Form :

Flat

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Number of Elements :

1

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

11A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

4.5 mJ

Current - Continuous Drain (Id) @ 25°C :

11A Ta 24A Tc

Pulsed Drain Current-Max (IDM) :

44A

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Power Dissipation-Max :

2W Ta

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING