RQ3E080GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

2.4 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Factory Lead Time :

20 Weeks

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Number of Channels :

1

Turn On Delay Time :

6.9 ns

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

17.3 ns

Package / Case :

8-PowerVDFN

Pulsed Drain Current-Max (IDM) :

32A

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Rise Time :

3.6ns

Terminal Position :

Dual

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Rds On (Max) @ Id, Vgs :

16.7m Ω @ 8A, 10V

Height :

900μm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Element Configuration :

Single

Number of Pins :

8

Power Dissipation-Max :

2W Ta 15W Tc

Vgs (Max) :

±20V

Terminal Form :

Flat