RQ3E120GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Mount :

Surface Mount

Turn-Off Delay Time :

25.5 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 12A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Lead Free :

Lead Free

Case Connection :

DRAIN

Rise Time :

4.5ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Flat

Power Dissipation-Max :

2W Ta 16W Tc

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Single

Number of Channels :

1

Turn On Delay Time :

9.6 ns

Fall Time (Typ) :

3.4 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Continuous Drain Current (ID) :

12A

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2013

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 15V