RQ3E075ATTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

15W Tc

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 15V

Published :

2017

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

30A

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

20 mJ

FET Type :

P-Channel

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

7.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.5A, 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.033Ohm

Package / Case :

8-PowerVDFN

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED