RQ3E070BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 15V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

8-PowerVDFN

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F5

Number of Pins :

8

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

27m Ω @ 7A, 10V

Resistance :

20mOhm

Drain Current-Max (Abs) (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Mount :

Surface Mount

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Continuous Drain Current (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Threshold Voltage :

2.5V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V