RQ3E100BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 10A, 10V

Number of Pins :

8

Vgs (Max) :

±20V

Published :

2014

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

10A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Power Dissipation-Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

40A

Terminal Position :

Dual

Number of Terminations :

5

Package / Case :

8-PowerVDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.5V

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

not_compliant

Resistance :

7.7mOhm

Number of Elements :

1

Mount :

Surface Mount