RQ3E100MNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Transistor Application :

SWITCHING

Turn On Delay Time :

7 ns

Fall Time (Typ) :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

JESD-30 Code :

R-PDSO-F5

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

30V

Rise Time :

17ns

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A

Mount :

Surface Mount

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Rds On (Max) @ Id, Vgs :

12.3m Ω @ 10A, 10V

Turn-Off Delay Time :

31 ns

Terminal Position :

Dual

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 10V

Case Connection :

DRAIN

Published :

2013

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerVDFN

Pulsed Drain Current-Max (IDM) :

40A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Vgs (Max) :

±20V