RQ3E130MNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

17 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

5

Case Connection :

DRAIN

Continuous Drain Current (ID) :

13A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

52A

Mounting Type :

Surface Mount

Terminal Position :

Dual

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 15V

Power Dissipation-Max :

2W Ta

JESD-30 Code :

R-PDSO-F5

Rise Time :

18ns

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

36 ns

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

7 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

10 ns

Package / Case :

8-PowerVDFN

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8.1m Ω @ 13A, 10V

Transistor Element Material :

SILICON

Published :

2013

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

13A Ta