RQ3E070BNTB1

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Mfr.Part #
RQ3E070BNTB1
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerVDFN
Datasheet
Download
Description
NCH 30V 15A POWER MOSFET: RQ3E07
Stock
6,432
In Stock :
6,432

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Package :
Digi-Reel?
Rise Time :
8 ns
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
Vgs (Max) :
±20V
Subcategory :
MOSFETs
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
7A (Ta), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs :
8.9 nC @ 10 V
Power Dissipation (Max) :
2W (Ta), 13W (Tc)
Drain to Source Voltage (Vdss) :
30 V
Packaging :
MouseReel
Supplier Device Package :
8-HSMT (3.2x3)
Mounting Type :
Surface Mount
Manufacturer :
Rohm Semiconductor
Number of Channels :
1 Channel
Package / Case :
8-PowerVDFN
Mounting Style :
SMD/SMT
Operating Temperature :
150°C (TJ)
Configuration :
Single
Series :
-
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Brand :
Rohm Semiconductor
Product Status :
Active
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
27mOhm @ 7A, 10V
FET Type :
N-Channel
FET Feature :
-
RoHS :
Details
Datasheets
RQ3E070BNTB1
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RQ3E070BNTB1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:8-PowerVDFN, Operating Temperature:150°C (TJ), RQ3E070BNTB1 pinout, RQ3E070BNTB1 datasheet PDF, RQ3E070BNTB1 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RQ3E070BNTB1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RQ3E070BNTB1


N-Channel MouseReel 27mOhm @ 7A, 10V ±20V 410 pF @ 15 V 8.9 nC @ 10 V 30 V 8-PowerVDFN

RQ3E070BNTB1 Overview


A device's maximum input capacitance is 410 pF @ 15 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30 V drain to source voltage (Vdss).

RQ3E070BNTB1 Features


a 30 V drain to source voltage (Vdss)


RQ3E070BNTB1 Applications


There are a lot of Rohm Semiconductor
RQ3E070BNTB1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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