RQ3E130BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2W Ta

Continuous Drain Current (ID) :

13A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Vgs (Max) :

±20V

Published :

2014

ECCN Code :

EAR99

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

20 Weeks

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drain-source On Resistance-Max :

0.0094Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

6m Ω @ 13A, 10V

Reach Compliance Code :

not_compliant

Number of Terminations :

5

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mount :

Surface Mount

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

52A

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 15V

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Element Material :

SILICON