RQ3E130BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.0094Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

13A

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Published :

2014

Terminal Form :

Flat

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

13A Ta

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Number of Terminations :

5

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

6m Ω @ 13A, 10V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

52A

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED