RQ3E180AJTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerVDFN

Operating Temperature :

150°C TJ

Published :

2015

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18A, 4.5V

Mount :

Surface Mount

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 11mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

18A Ta 30A Tc

Number of Elements :

1

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

30A

Avalanche Energy Rating (Eas) :

24.6 mJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2W Ta 30W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4290pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Number of Pins :

8

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

72A