RQ3E150MNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Power Dissipation-Max :

2W Ta

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 15A, 10V

Number of Elements :

1

Package / Case :

8-PowerVDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Pulsed Drain Current-Max (IDM) :

60A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Position :

Dual

Number of Pins :

8

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Operating Temperature :

150°C TJ

Number of Terminations :

5

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN