RQ3E150GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

60A

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 15V

ECCN Code :

EAR99

Number of Elements :

1

Published :

2010

Number of Pins :

8

Turn-Off Delay Time :

34.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

DS Breakdown Voltage-Min :

30V

Operating Temperature :

150°C TJ

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 15A, 10V

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Rise Time :

5.8ns

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Form :

Flat

Vgs (Max) :

±20V

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Turn On Delay Time :

11.6 ns

Power Dissipation-Max :

2W Ta 17.2W Tc

Number of Terminations :

5

Fall Time (Typ) :

7.8 ns

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Terminal Position :

Dual