RQ3E150BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Package / Case :

8-PowerVDFN

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Number of Terminations :

5

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 15A, 10V

JESD-30 Code :

R-PDSO-F5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

15A

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

15A Ta

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2W Ta

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 15V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0074Ohm

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

ECCN Code :

EAR99