RGTH80TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Test Condition :

400V, 40A, 10 Ω, 15V

Td (on/off) @ 25°C :

34ns/120ns

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

66W

Reach Compliance Code :

not_compliant

Current - Collector Pulsed (Icm) :

160A

Input Type :

Standard

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Current - Collector (Ic) (Max) :

31A

Operating Temperature :

-40°C~175°C TJ

Terminal Position :

Single

Gate Charge :

79nC

Surface Mount :

No

IGBT Type :

Trench Field Stop

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Time :

84 ns

Number of Terminations :

3

Package / Case :

TO-3PFM, SC-93-3

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 40A

Factory Lead Time :

17 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Case Connection :

Isolated

Reverse Recovery Time :

58ns

Turn Off Time-Nom (toff) :

194 ns

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

650V

Mounting Type :

Through Hole