RGTH40TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Power - Max :

144W

Continuous Collector Current :

20A

Reverse Recovery Time :

58 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

144W

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Time :

47 ns

Gate Charge :

40nC

IGBT Type :

Trench Field Stop

Test Condition :

400V, 20A, 10 Ω, 15V

Current - Collector Pulsed (Icm) :

80A

Factory Lead Time :

17 Weeks

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

Published :

2014

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

650V

Number of Elements :

1

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

650V

Turn Off Time-Nom (toff) :

141 ns

Number of Pins :

3

Pbfree Code :

yes

Weight :

38.000013g

Input Type :

Standard

Operating Temperature :

-40°C~175°C TJ

Max Collector Current :

40A

Mounting Type :

Through Hole

Number of Terminations :

3

REACH SVHC :

Unknown

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

22ns/73ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single