RGTH00TS65GC11
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- Mfr.Part #
- RGTH00TS65GC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 650V 85A 277W TO-247N
- Stock
- 360
- In Stock ：
- 360
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 200A
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Continuous Collector Current :
- 50A
- Operating Temperature :
- -40°C~175°C TJ
- Power - Max :
- 277W
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Turn On Time :
- 102 ns
- Weight :
- 38.000013g
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 277W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Packaging :
- Tube
- Gate Charge :
- 94nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- IGBT Type :
- Trench Field Stop
- Turn Off Time-Nom (toff) :
- 221 ns
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 50A
- Collector Emitter Breakdown Voltage :
- 650V
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Test Condition :
- 400V, 50A, 10 Ω, 15V
- Td (on/off) @ 25°C :
- 39ns/143ns
- REACH SVHC :
- Unknown
- Collector Emitter Saturation Voltage :
- 1.6V
- Published :
- 2014
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 650V
- Max Collector Current :
- 85A
- Transistor Application :
- POWER CONTROL
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- RGTH00TS65GC11
RGTH00TS65GC11 datasheet pdf and Transistors - IGBTs - Single product details from ROHM Semiconductor stock available at
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