RGTH40TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Reverse Recovery Time :

58ns

Case Connection :

Isolated

Transistor Application :

POWER CONTROL

Configuration :

SINGLE WITH BUILT-IN DIODE

Test Condition :

400V, 20A, 10 Ω, 15V

JESD-30 Code :

R-PSFM-T3

Td (on/off) @ 25°C :

22ns/73ns

Power - Max :

56W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

141 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

650V

Surface Mount :

No

Input Type :

Standard

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

80A

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-40°C~175°C TJ

Current - Collector (Ic) (Max) :

23A

Gate Charge :

40nC

Transistor Element Material :

SILICON

Turn On Time :

47 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

IGBT Type :

Trench Field Stop

Package / Case :

TO-3PFM, SC-93-3

Factory Lead Time :

17 Weeks