RGTH00TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

650V

IGBT Type :

Trench Field Stop

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Turn Off Time-Nom (toff) :

221 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Transistor Application :

POWER CONTROL

RoHS Status :

ROHS3 Compliant

Turn On Time :

102 ns

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Test Condition :

400V, 50A, 10 Ω, 15V

Operating Temperature :

-40°C~175°C TJ

Number of Terminations :

3

Td (on/off) @ 25°C :

39ns/143ns

Current - Collector Pulsed (Icm) :

200A

Current - Collector (Ic) (Max) :

35A

Factory Lead Time :

17 Weeks

Polarity/Channel Type :

N-Channel

Power - Max :

72W

Package / Case :

TO-3PFM, SC-93-3

Surface Mount :

No

Gate Charge :

94nC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Reverse Recovery Time :

225ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)