RGTH00TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

Max Collector Current :

85A

Published :

2014

Mounting Type :

Through Hole

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.6V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

650V

RoHS Status :

ROHS3 Compliant

Power - Max :

277W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

102 ns

Weight :

38.000013g

Reverse Recovery Time :

54 ns

Continuous Collector Current :

50A

Operating Temperature :

-40°C~175°C TJ

Packaging :

Tube

Turn Off Time-Nom (toff) :

221 ns

IGBT Type :

Trench Field Stop

Current - Collector Pulsed (Icm) :

200A

Max Power Dissipation :

277W

Pbfree Code :

yes

Mount :

Through Hole

Input Type :

Standard

Test Condition :

400V, 50A, 10 Ω, 15V

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

650V

Package / Case :

TO-247-3

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge :

94nC

Td (on/off) @ 25°C :

39ns/143ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Number of Pins :

3

REACH SVHC :

Unknown