RGTH50TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Gate Charge :

49nC

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Case Connection :

Isolated

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Current - Collector (Ic) (Max) :

26A

Factory Lead Time :

17 Weeks

Voltage - Collector Emitter Breakdown (Max) :

650V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

100A

Test Condition :

400V, 25A, 10 Ω, 15V

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

27ns/94ns

IGBT Type :

Trench Field Stop

Power - Max :

59W

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Package / Case :

TO-3PFM, SC-93-3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Reverse Recovery Time :

58ns

Input Type :

Standard

Turn On Time :

65 ns

Operating Temperature :

-40°C~175°C TJ

Turn Off Time-Nom (toff) :

172 ns