RGTH50TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Power - Max :

59W

Input Type :

Standard

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

650V

Turn Off Time-Nom (toff) :

172 ns

Factory Lead Time :

17 Weeks

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Package / Case :

TO-3PFM, SC-93-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

100A

Test Condition :

400V, 25A, 10 Ω, 15V

Reverse Recovery Time :

58ns

Td (on/off) @ 25°C :

27ns/94ns

Current - Collector (Ic) (Max) :

26A

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Number of Elements :

1

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Number of Terminations :

3

IGBT Type :

Trench Field Stop

Operating Temperature :

-40°C~175°C TJ

Turn On Time :

65 ns

Gate Charge :

49nC

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

RoHS Status :

ROHS3 Compliant