NTMD6N03R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

6A

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

6A

Lead Free :

Lead Free

Rise Time :

22ns

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain Current-Max (Abs) (ID) :

6A

Pbfree Code :

yes

JESD-609 Code :

e3

Contact Plating :

Tin

Terminal Form :

Gull wing

ECCN Code :

EAR99

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Factory Lead Time :

2 Weeks

Base Part Number :

NTMD6N03

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 24V

Pulsed Drain Current-Max (IDM) :

30A

Resistance :

32mOhm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

32m Ω @ 6A, 10V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2W

Mounting Type :

Surface Mount

Power - Max :

1.29W

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Mount :

Surface Mount

Number of Terminations :

8

Max Power Dissipation :

2W

Fall Time (Typ) :

45 ns

Transistor Element Material :

SILICON