NTMD6N02R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Factory Lead Time :

45 Weeks

Height :

1.5mm

Resistance :

35mOhm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 4.5V

Width :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 16V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

50ns

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

20V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Radiation Hardening :

No

Base Part Number :

NTMD6N02

Power - Max :

730mW

Pulsed Drain Current-Max (IDM) :

30A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

360 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Nominal Vgs :

900 mV

Published :

2004

Current Rating :

6A

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3.92A

Pin Count :

8

Fall Time (Typ) :

80 ns

Turn-Off Delay Time :

45 ns

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Length :

5mm

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Number of Pins :

8

Number of Elements :

2

Continuous Drain Current (ID) :

6.5A

Terminal Form :

Gull wing

Turn On Delay Time :

12 ns