NTMD5838NLR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Continuous Drain Current (ID) :

7.4A

Published :

2006

Factory Lead Time :

52 Weeks

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

35A

Contact Plating :

Tin

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Pbfree Code :

yes

Surface Mount :

yes

Height :

1.5mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

Threshold Voltage :

1.8V

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Transistor Element Material :

SILICON

Pin Count :

8

Rise Time :

23ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2.1W

ECCN Code :

EAR99

Width :

4mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 10V

Fall Time (Typ) :

4 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

11 ns

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Number of Elements :

2

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

2.1W

Turn-Off Delay Time :

17 ns

Drain to Source Breakdown Voltage :

40V