NTE235

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

THROUGH-HOLE

HTS Code :

8541.29.00.75

Power Dissipation :

1.2(W)

Collector Current-Max (IC) :

3 A

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Frequency - Transition :

150MHz

Case Connection :

COLLECTOR

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Output Power :

4(MIN)(W)

Package Type :

TO-220

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gain :

-

Type :

NPN

Number of Terminals :

3

Power - Max :

1.2W

Subcategory :

Other Transistors

Package / Case :

TO-220-3

Manufacturer :

NTE Electronics

Transistor Application :

AMPLIFIER

Product Status :

Active

Emitter-Base Voltage :

5(V)

Surface Mount :

No

Polarity/Channel Type :

NPN

Noise Figure (dB Typ @ f) :

-

Operating Temp Range :

-55C to 150C

JEDEC-95 Code :

TO-220AB

Operating Temperature :

150°C (TJ)

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 500mA, 5V

Series :

-

Collector Current (DC) :

5(A)

Reach Compliance Code :

Unknown

Collector-Base Voltage :

80(V)

Power Dissipation Ambient-Max :

12 W

DC Current Gain-Min (hFE) :

25

Pin Count :

3

Current - Collector (Ic) (Max) :

3A

Supplier Device Package :

TO-220

Power Dissipation-Max (Abs) :

12 W

Qualification Status :

Not Qualified

Transistor Type :

NPN

Configuration :

Single

Terminal Position :

Single

Voltage - Collector Emitter Breakdown (Max) :

75V