NTE215

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 8mA, 4A

Terminal Position :

Single

Current - Collector (Ic) (Max) :

8 A

Manufacturer :

NTE Electronics

Power Dissipation-Max (Abs) :

60 W

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-3P

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Operating Temperature :

150°C (TJ)

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

DC Current Gain-Min (hFE) :

1500

Pin Count :

2

Number of Elements :

1

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Current - Collector Cutoff (Max) :

100µA (ICBO)

Case Connection :

COLLECTOR

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

100 V

Power - Max :

2.5 W

Qualification Status :

Not Qualified

Collector Current-Max (IC) :

8 A

Transistor Element Material :

SILICON

Frequency - Transition :

20MHz

Product Status :

Active

Package :

Bag

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

60 W

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

100 V

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Transistor Type :

NPN - Darlington

Package / Case :

TO-3P-3, SC-65-3

Subcategory :

Other Transistors

DC Current Gain (hFE) (Min) @ Ic, Vce :

1500 @ 4A, 3V

Number of Terminals :

3