NTE229

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

No

Power Dissipation-Max (Abs) :

0.425 W

DC Current Gain-Min (hFE) :

30

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Power Gain-Min (Gp) :

28 dB

Power - Max :

425mW

Configuration :

Single

Supplier Device Package :

TO-92

Number of Terminals :

3

HTS Code :

8541.21.00.75

JEDEC-95 Code :

TO-92

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 10V

Collector Current-Max (IC) :

0.05 A

Transistor Element Material :

SILICON

Frequency - Transition :

500MHz

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Gain :

28dB

ECCN Code :

EAR99

Operating Temperature :

150°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :

30V

Mounting Type :

Through Hole

Collector-Base Capacitance-Max :

0.4 pF

Polarity/Channel Type :

NPN

Manufacturer :

NTE Electronics

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

40 V

Series :

-

Terminal Position :

BOTTOM

Package :

Bag

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Elements :

1

Qualification Status :

Not Qualified

Package Shape :

Round

Noise Figure (dB Typ @ f) :

6dB @ 45MHz

Current - Collector (Ic) (Max) :

50mA

Product Status :

Active

Terminal Form :

Wire

Pin Count :

3

JESD-30 Code :

O-PBCY-W3