NTE229

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Power Gain-Min (Gp) :

28 dB

Noise Figure (dB Typ @ f) :

6dB @ 45MHz

JESD-30 Code :

O-PBCY-W3

Gain :

28dB

Terminal Form :

Wire

Power - Max :

425mW

Collector-Base Capacitance-Max :

0.4 pF

Reach Compliance Code :

Unknown

Package Shape :

Round

JEDEC-95 Code :

TO-92

Number of Terminals :

3

Subcategory :

Other Transistors

Frequency - Transition :

500MHz

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

50mA

Operating Temperature :

150°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :

30V

Transistor Type :

NPN

Terminal Position :

BOTTOM

Number of Elements :

1

Surface Mount :

No

Configuration :

Single

Product Status :

Active

Collector Current-Max (IC) :

0.05 A

Manufacturer :

NTE Electronics

Supplier Device Package :

TO-92

ECCN Code :

EAR99

Collector-Emitter Voltage-Max :

40 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Series :

-

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

DC Current Gain-Min (hFE) :

30

Package :

Bag

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Power Dissipation-Max (Abs) :

0.425 W

Pin Count :

3

Transistor Application :

AMPLIFIER