NTE225

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Series :

-

Package Shape :

Round

Polarity/Channel Type :

NPN

Terminal Form :

PIN/PEG

Pin Count :

3

Power - Max :

10 W

Voltage - Collector Emitter Breakdown (Max) :

350 V

Number of Elements :

1

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

350 V

JESD-30 Code :

O-MBFM-P3

Power Dissipation Ambient-Max :

10 W

Transistor Type :

NPN

DC Current Gain-Min (hFE) :

40

Frequency - Transition :

-

Supplier Device Package :

TO-39 W/flange?

Package / Case :

TO-39 W/flange?

Current - Collector Cutoff (Max) :

20μA

Manufacturer :

NTE Electronics

Case Connection :

COLLECTOR

Collector Current-Max (IC) :

1 A

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 10mA, 10V

Surface Mount :

No

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Number of Terminals :

3

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

1 A

Operating Temperature :

-65°C ~ 200°C (TJ)

Package :

Bag

Power Dissipation-Max (Abs) :

10 W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA