NTE225

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

DC Current Gain-Min (hFE) :

40

Power Dissipation Ambient-Max :

10 W

Product Status :

Active

Supplier Device Package :

TO-39 W/flange?

Polarity/Channel Type :

NPN

Package / Case :

TO-39 W/flange?

JESD-30 Code :

O-MBFM-P3

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Transistor Application :

SWITCHING

Configuration :

Single

Collector Current-Max (IC) :

1 A

Transistor Type :

NPN

Surface Mount :

No

Number of Elements :

1

Current - Collector Cutoff (Max) :

20μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 10mA, 10V

Voltage - Collector Emitter Breakdown (Max) :

350 V

Number of Terminals :

3

Current - Collector (Ic) (Max) :

1 A

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Pin Count :

3

Collector-Emitter Voltage-Max :

350 V

Operating Temperature :

-65°C ~ 200°C (TJ)

Frequency - Transition :

-

Reach Compliance Code :

Unknown

Subcategory :

Other Transistors

Package :

Bag

Power - Max :

10 W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Power Dissipation-Max (Abs) :

10 W

Package Shape :

Round