NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

-

Polarity/Channel Type :

NPN

HTS Code :

8541.29.00.75

Terminal Position :

BOTTOM

Power Dissipation-Max (Abs) :

10 W

Operating Temperature :

175°C (TJ)

ECCN Code :

EAR99

Manufacturer :

NTE Electronics

Subcategory :

Other Transistors

Transistor Type :

NPN

Power - Max :

10W

Power Dissipation Ambient-Max :

10 W

Max Operating Temperature :

175 °C

Noise Figure (dB Typ @ f) :

-

Package / Case :

TO-39 W/flange?

RoHS :

Non-Compliant

Collector Base Voltage (VCBO) :

60 V

Pin Count :

3

Terminal Form :

PIN/PEG

Number of Elements :

1

Mounting Type :

Through Hole

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Number of Pins :

4

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Element Material :

SILICON

JESD-30 Code :

O-MBFM-P3

Transistor Application :

AMPLIFIER

Number of Terminals :

3

Product Status :

Active

Supplier Device Package :

TO-39 W/flange?

Surface Mount :

No

Max Collector Current :

2 A

Emitter Base Voltage (VEBO) :

4 V

Series :

-

Min Operating Temperature :

-65 °C

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Configuration :

Single

Package Shape :

Round

Frequency - Transition :

300MHz

Mount :

Through Hole

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Collector Current-Max (IC) :

2 A