NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-30 Code :

O-MBFM-P3

Gain :

-

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Number of Elements :

1

Frequency - Transition :

300MHz

Mount :

Through Hole

Collector Base Voltage (VCBO) :

60 V

Voltage - Collector Emitter Breakdown (Max) :

60V

Package / Case :

TO-39 W/flange?

Number of Pins :

4

Noise Figure (dB Typ @ f) :

-

Min Operating Temperature :

-65 °C

Power Dissipation-Max (Abs) :

10 W

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

2A

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Package Shape :

Round

Transistor Element Material :

SILICON

Max Operating Temperature :

175 °C

Subcategory :

Other Transistors

HTS Code :

8541.29.00.75

Surface Mount :

No

Terminal Position :

BOTTOM

Series :

-

Case Connection :

COLLECTOR

RoHS :

Non-Compliant

Transistor Application :

AMPLIFIER

Pin Count :

3

Power Dissipation Ambient-Max :

10 W

Manufacturer :

NTE Electronics

Number of Terminals :

3

Supplier Device Package :

TO-39 W/flange?

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Configuration :

Single

Power - Max :

10W

Emitter Base Voltage (VEBO) :

4 V

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Max Collector Current :

2 A

Terminal Form :

PIN/PEG

Operating Temperature :

175°C (TJ)

Product Status :

Active

Transistor Type :

NPN

Collector Current-Max (IC) :

2 A