NTE222
- Mfr.Part #
- NTE222
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-206AF, TO-72-4 Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 25V 50MA TO72
- Stock
- 7
- In Stock :
- 7
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- DUAL GATE, DEPLETION MODE
- Rad Hardened :
- No
- Case Connection :
- SOURCE
- FET Type :
- N-Channel
- Type :
- Small Signal
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- TO-72
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Manufacturer :
- NTE Electronics
- Continuous Drain Current :
- 0.05(A)
- Terminal Position :
- BOTTOM
- Package :
- Bag
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 20µA
- Configuration :
- Single
- Package Type :
- TO-72
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-72
- Power Dissipation (Max) :
- 360mW (Ta), 1.2mW (Tc)
- Reach Compliance Code :
- Unknown
- Drain-Source On-Volt :
- 25(V)
- Power Gain-Min (Gp) :
- 14 dB
- FET Feature :
- -
- Power Dissipation-Max (Abs) :
- 0.33 W
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Series :
- -
- Pin Count :
- 4
- Mounting :
- Through Hole
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) :
- 25 V
- Operating Temperature Classification :
- Military
- Polarity :
- N
- Terminal Form :
- Wire
- Surface Mount :
- No
- Subcategory :
- FET General Purpose Power
- HTS Code :
- 8541.21.00.95
- JESD-30 Code :
- O-MBCY-W4
- DS Breakdown Voltage-Min :
- 25 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300 pF @ 15 V
- Highest Frequency Band :
- VERY HIGH FREQUENCY BAND
- Number of Terminals :
- 4
- Vgs (Max) :
- -
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-206AF, TO-72-4 Metal Can
- Qualification Status :
- Not Qualified
- Package Shape :
- Round
- Power Dissipation :
- 0.36(W)
- Feedback Cap-Max (Crss) :
- 0.03 pF
- Current - Continuous Drain (Id) @ 25°C :
- 50mA (Tj)
- Operating Temp Range :
- -65C to 175C
- Product Status :
- Active
- Datasheets
- NTE222
NTE222 Documents

N-Channel - - 3300 pF @ 15 V 25 V TO-206AF, TO-72-4 Metal Can
NTE222 Overview
A device's maximal input capacitance is 3300 pF @ 15 V, which is defined as the capacitance between its input terminals with either input grounded.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25 V.This transistor requires a 25 V drain to source voltage (Vdss).
NTE222 Features
a 25 V drain to source voltage (Vdss)
NTE222 Applications
There are a lot of NTE Electronics, Inc
NTE222 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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