NTE222

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

0.36(W)

HTS Code :

8541.21.00.95

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Continuous Drain Current :

0.05(A)

Operating Temperature Classification :

Military

Operating Temperature :

-65°C ~ 175°C (TJ)

FET Type :

N-Channel

Configuration :

Single

Mounting Type :

Through Hole

Terminal Form :

Wire

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting :

Through Hole

Product Status :

Active

Power Dissipation (Max) :

360mW (Ta), 1.2mW (Tc)

FET Feature :

-

Transistor Application :

AMPLIFIER

JEDEC-95 Code :

TO-72

Reach Compliance Code :

Unknown

Operating Temp Range :

-65C to 175C

Supplier Device Package :

TO-72

Power Dissipation-Max (Abs) :

0.33 W

Drain-Source On-Volt :

25(V)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Power Gain-Min (Gp) :

14 dB

Surface Mount :

No

Package :

Bag

Rad Hardened :

No

Terminal Position :

BOTTOM

JESD-30 Code :

O-MBCY-W4

Number of Terminals :

4

Vgs(th) (Max) @ Id :

4V @ 20µA

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

-

Manufacturer :

NTE Electronics

Series :

-

Polarity :

N

Rds On (Max) @ Id, Vgs :

-

DS Breakdown Voltage-Min :

25 V

Case Connection :

SOURCE

Package Type :

TO-72

Operating Mode :

DUAL GATE, DEPLETION MODE

Package Shape :

Round

Current - Continuous Drain (Id) @ 25°C :

50mA (Tj)

Pin Count :

4

Vgs (Max) :

-

ECCN Code :

EAR99

Subcategory :

FET General Purpose Power

Feedback Cap-Max (Crss) :

0.03 pF

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Type :

Small Signal

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 15 V

Transistor Element Material :

SILICON