NTE222

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain-Source On-Volt :

25(V)

Feedback Cap-Max (Crss) :

0.03 pF

Continuous Drain Current :

0.05(A)

Operating Temperature Classification :

Military

Package :

Bag

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rad Hardened :

No

Supplier Device Package :

TO-72

JESD-30 Code :

O-MBCY-W4

Terminal Form :

Wire

Case Connection :

SOURCE

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 15 V

DS Breakdown Voltage-Min :

25 V

Drain to Source Voltage (Vdss) :

25 V

Power Dissipation-Max (Abs) :

0.33 W

Operating Mode :

DUAL GATE, DEPLETION MODE

Qualification Status :

Not Qualified

Package Shape :

Round

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-65°C ~ 175°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

-

Transistor Element Material :

SILICON

Product Status :

Active

Power Dissipation (Max) :

360mW (Ta), 1.2mW (Tc)

Operating Temp Range :

-65C to 175C

Mounting Type :

Through Hole

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Terminal Position :

BOTTOM

Vgs (Max) :

-

Number of Terminals :

4

Subcategory :

FET General Purpose Power

Pin Count :

4

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 20µA

FET Type :

N-Channel

Mounting :

Through Hole

Type :

Small Signal

Manufacturer :

NTE Electronics

Package Type :

TO-72

Current - Continuous Drain (Id) @ 25°C :

50mA (Tj)

JEDEC-95 Code :

TO-72

Polarity/Channel Type :

N-Channel

HTS Code :

8541.21.00.95

Polarity :

N

Power Gain-Min (Gp) :

14 dB

ECCN Code :

EAR99

FET Feature :

-

Rds On (Max) @ Id, Vgs :

-

Package / Case :

TO-206AF, TO-72-4 Metal Can

Transistor Application :

AMPLIFIER

Series :

-

Reach Compliance Code :

Unknown

Power Dissipation :

0.36(W)