NTE222
- Mfr.Part #
- NTE222
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-206AF, TO-72-4 Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 25V 50MA TO72
- Stock
- 7
- In Stock :
- 7
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 0.36(W)
- HTS Code :
- 8541.21.00.95
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Continuous Drain Current :
- 0.05(A)
- Operating Temperature Classification :
- Military
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- FET Type :
- N-Channel
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting :
- Through Hole
- Product Status :
- Active
- Power Dissipation (Max) :
- 360mW (Ta), 1.2mW (Tc)
- FET Feature :
- -
- Transistor Application :
- AMPLIFIER
- JEDEC-95 Code :
- TO-72
- Reach Compliance Code :
- Unknown
- Operating Temp Range :
- -65C to 175C
- Supplier Device Package :
- TO-72
- Power Dissipation-Max (Abs) :
- 0.33 W
- Drain-Source On-Volt :
- 25(V)
- Package / Case :
- TO-206AF, TO-72-4 Metal Can
- Power Gain-Min (Gp) :
- 14 dB
- Surface Mount :
- No
- Package :
- Bag
- Rad Hardened :
- No
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-MBCY-W4
- Number of Terminals :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 20µA
- Drain to Source Voltage (Vdss) :
- 25 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Manufacturer :
- NTE Electronics
- Series :
- -
- Polarity :
- N
- Rds On (Max) @ Id, Vgs :
- -
- DS Breakdown Voltage-Min :
- 25 V
- Case Connection :
- SOURCE
- Package Type :
- TO-72
- Operating Mode :
- DUAL GATE, DEPLETION MODE
- Package Shape :
- Round
- Current - Continuous Drain (Id) @ 25°C :
- 50mA (Tj)
- Pin Count :
- 4
- Vgs (Max) :
- -
- ECCN Code :
- EAR99
- Subcategory :
- FET General Purpose Power
- Feedback Cap-Max (Crss) :
- 0.03 pF
- Highest Frequency Band :
- VERY HIGH FREQUENCY BAND
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Type :
- Small Signal
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300 pF @ 15 V
- Transistor Element Material :
- SILICON
- Datasheets
- NTE222
NTE222 Documents

N-Channel - - 3300 pF @ 15 V 25 V TO-206AF, TO-72-4 Metal Can
NTE222 Overview
A device's maximal input capacitance is 3300 pF @ 15 V, which is defined as the capacitance between its input terminals with either input grounded.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25 V.This transistor requires a 25 V drain to source voltage (Vdss).
NTE222 Features
a 25 V drain to source voltage (Vdss)
NTE222 Applications
There are a lot of NTE Electronics, Inc
NTE222 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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