NTE215

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bag

Subcategory :

Other Transistors

Transistor Element Material :

SILICON

Product Status :

Active

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3, SC-65-3

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

60 W

Number of Terminals :

3

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Power - Max :

2.5 W

Pin Count :

2

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

100 V

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

100 V

Manufacturer :

NTE Electronics

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 8mA, 4A

Terminal Position :

Single

Series :

-

DC Current Gain-Min (hFE) :

1500

Supplier Device Package :

TO-3P

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Transistor Type :

NPN - Darlington

HTS Code :

8541.29.00.95

Surface Mount :

No

Number of Elements :

1

Transistor Application :

SWITCHING

Frequency - Transition :

20MHz

Power Dissipation Ambient-Max :

60 W

Current - Collector (Ic) (Max) :

8 A

Collector Current-Max (IC) :

8 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

1500 @ 4A, 3V